ipb45n06s3-16 IPI45N06S3-16, ipp45n06s3-16 opti mos ? -t power-transistor features ? n-channel - enhancement mode ? automotive aec q101 qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green package (lead free) ? ultra low rds(on) ? avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current 1) i d t c =25 c, v gs =10 v 45 a t c =100 c, v gs =10 v 2) 33 pulsed drain current 2) i d,pulse t c =25 c 180 avalanche energy, single pulse 3) e as i d = 27.5 a 95 mj drain gate voltage 2) v dg 55 gate source voltage 4) v gs 20 v power dissipation p tot t c =25 c 65 w operating and storage temperature t j , t stg -55 ... +175 c iec climatic category; din iec 68-1 55/175/56 value v ds 55 v r ds(on),max (smd version) 15.4 m ? i d 45 a product summary type package ordering code marking ipb45n06s3-16 pg-to263-3-2 sp0001-02224 3n0616 IPI45N06S3-16 pg-to262-3-1 sp0001-02217 3n0616 ipp45n06s3-16 pg-to220-3-1 sp0001-02218 3n0616 pg-to220-3-1 pg-to262-3-1 pg-to263-3-2 rev. 1.0 page 1 2005-11-25 www.datasheet.co.kr datasheet pdf - http://www..net/
ipb45n06s3-16 IPI45N06S3-16, ipp45n06s3-16 parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc - - 2.3 k/w thermal resistance, junction - ambient, leaded r thja --62 smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 5) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 55 - - v gate threshold voltage v gs(th) v ds = v gs , i d =30 a 2.1 3 4 zero gate voltage drain current i dss v ds =25 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =25 v, v gs =0 v, t j =125 c 1) - 1 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =23 a - 13.5 15.7 m ? v gs =10 v, i d =23 a, smd version - 13.2 15.4 values rev. 1.0 page 2 2005-11-25 www.datasheet.co.kr datasheet pdf - http://www..net/
ipb45n06s3-16 IPI45N06S3-16, ipp45n06s3-16 parameter symbol conditions unit min. typ. max. d y namic characteristics 2) input capacitance c iss - 2980 - pf output capacitance c oss - 450 - reverse transfer capacitance c rss - 430 - turn-on delay time t d(on) -28-ns rise time t r -61- turn-off delay time t d(off) -26- fall time t f -68- gate char g e characteristics 2) gate to source charge q gs -23-nc gate to drain charge q gd -10- gate charge total q g -4357 gate plateau voltage v plateau - 7.2 - v reverse diode diode continous forward current i s - - 45 a diode pulse current 2) i s,pulse - - 180 diode forward voltage 2) v sd v gs =0 v, i f =45 a, t j =25 c - 1.1 1.3 v reverse recovery time 2) t rr v r =27.5 v, i f = i s , d i f /d t =100 a/s ---ns reverse recovery charge 2) q rr v r =27.5 v, i f = i s , d i f /d t =100 a/s ---nc 2) defined by design. not subject to production test. 3) see diagrams 12 and 13. 4) qualified at -5v and +20v. 5) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1) current is limited by bondwire; with an r thjc = 2.3 k/w the chip is able to carry 46a at 25c. for detailed information see application note anps071e at www.infineon.com/optimos t c =25 c values v gs =0 v, v ds =25 v, f =1 mhz v dd =27.5 v, v gs =10 v, i d =45 a, r g =22 ? v dd =11 v, i d =45 a, v gs =0 to 10 v rev. 1.0 page 3 2005-11-25 www.datasheet.co.kr datasheet pdf - http://www..net/
ipb45n06s3-16 IPI45N06S3-16, ipp45n06s3-16 1 power dissipation 2 drain current p tot =f( t c ); v gs 6 v i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 1 10 100 1000 0.1 1 10 100 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 -7 10 1 10 0 10 -1 10 -2 10 -3 t p [s] z thjc [k/w] 0 10 20 30 40 50 60 70 0 50 100 150 200 t c [c] p tot [w] 0 10 20 30 40 50 0 50 100 150 200 t c [c] i d [a] rev. 1.0 page 4 2005-11-25 www.datasheet.co.kr datasheet pdf - http://www..net/
ipb45n06s3-16 IPI45N06S3-16, ipp45n06s3-16 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs , pulsed parameter: v gs 7 typ. transfer characteristics 8 drain-source on-state resistance i d =f( v gs ); v ds =10 v r ds(on) =f( t j ); i d =20 a; v gs =10 v parameter: t j 7v 8v 9v 10v 10 15 20 25 30 0 20406080100 i d [a] r ds(on) [m ? ] 5.5 v 6 v 6.5 v 7 v 8 v 10 v 0 20 40 60 80 100 120 140 160 0 5 10 15 v ds [v] i d [a] 0 5 10 15 20 25 30 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 25 c 175 c -55 c 0 25 50 75 100 2345678 v gs [v] i d [a] rev. 1.0 page 5 2005-11-25 www.datasheet.co.kr datasheet pdf - http://www..net/
ipb45n06s3-16 IPI45N06S3-16, ipp45n06s3-16 9 typ. gate threshold voltage 10 typ. capacitances v gs(th) =f( t j ); v gs = v ds c =f( v ds ); v gs =0 v; f =1 mhz parameter: i d 11 forward characteristics of reverse diode 12 typ. avalanche characteristics i f =f( v sd ), pulsed i as =f( t av ) parameter: t j parameter: t j(start) 25c 100c 150c 1 10 100 1 10 100 1000 t av [s] i av [a] ciss coss crss 10 4 10 3 10 2 0 5 10 15 20 25 30 v ds [v] c [pf] 30a 300a 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] 25 c 175 c 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd [v] i f [a] rev. 1.0 page 6 2005-11-25 www.datasheet.co.kr datasheet pdf - http://www..net/
ipb45n06s3-16 IPI45N06S3-16, ipp45n06s3-16 13 typ. avalanche energy 15 drain-source breakdown voltage e as =f( t j ) v br(dss) =f( t j ); i d =1 ma parameter: i d 14 typ. gate charge 16 gate charge waveforms v gs =f( q gate ); i d =45 a pulsed parameter: v dd 15 a 25 a 45 a 0 50 100 150 200 250 300 0 50 100 150 200 t j [c] e as [mj] v gs q gate q gs q gd q g v gs q gate q gs q gd q g 46 48 50 52 54 56 58 60 62 64 66 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] 11v 44v 0 2 4 6 8 10 12 0204060 q gate [nc] v gs [v] rev. 1.0 page 7 2005-11-25 www.datasheet.co.kr datasheet pdf - http://www..net/
ipb45n06s3-16 IPI45N06S3-16, ipp45n06s3-16 package outline p-to263-3-2: outline 158 footprint packaging dimensions in mm rev. 1.0 page 8 2005-11-25 www.datasheet.co.kr datasheet pdf - http://www..net/
ipb45n06s3-16 IPI45N06S3-16, ipp45n06s3-16 published by infineon technologies ag st.-martin-stra?e 53 d-81541 mnchen ? infineon technologies ag 2004 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices, please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact your nearest infineon technologies office. infineon technologies' components may only be used in life-support devices or systems with the expressed written approval of infineon technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.0 page 9 2005-11-25 www.datasheet.co.kr datasheet pdf - http://www..net/
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